dual igbt hvigbt module 200 amperes/3300 volts QID3320002 1 01/13 rev. 8 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com outline drawing and circuit diagram dimensions inches millimeters a 5.51 140.0 b 2.87 73.0 c 1.89 48.0 d 4.880.01 124.00.25 e 2.240.01 57.00.25 f 1.18 30.0 g 0.43 11.0 h 1.07 27.15 j 0.20 5.0 k 1.65 42.0 description: powerex igbt modules are designed for use in switching applications. each module consists of two igbt transistors in a half-bridge configuration with each transistor having a reverse- connected super-fast recovery free-wheel diode. all components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. features: ? a dvanced mitsubishi r-series chip t echnology ? lo w v ce(sat) ? cr eepage and clearance meet iec 60077 -1 ? high isolation voltage ? r ugged swsoa and rrsoa ? c ompact industry standard package applications: ? medium v oltage drives ? high voltage power supplies dimensions inches millimeters l 0.690.01 17.50.25 m 0.38 9.75 n 0.20 5.0 p 0.22 5.5 q 1.44 36.5 r 0.16 4.0 s m6 metric m6 t 0.63 min. 16.0 min. u 0.11 x 0.02 2.8 x 0.5 v 0.28 dia. 7.0 dia. 3 2 1 8 7 6 n j (2typ) s nuts (3typ) h h v (4typ) m g (3typ) r (deep) eb k (3typ) l (2typ) p u (5typ) t (screwing depth) q 5 4 1 2 3 4 5 6 7 8 f f d a c
QID3320002 dual igbt hvigbt module 200 amperes/3300 volts 2 01/13 rev. 8 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com absolute maximum ratings, t j = 25 c unless otherwise specifed ratings symbol QID3320002 units junction temperature t j -40 t o 150 c storage temperature t stg -40 t o 125 c collector-emitter voltage (v ge = 0v) v ces 3300 v olts gate-emitter voltage (v ce = 0v) v ges 20 v olts collector current (t c = 102c) i c 200 amper es collector current (t c = 25c) i c 370 amper es peak collector current (pulse) i cm 400* amperes diode forward current** (t c = 99c) i f 200 amper es diode forward surge current** (pulse) i fm 400* amperes i 2 t for diode (t = 10ms, v r = 0v, t j = 125c) i 2 t 1 5 ka 2 sec maximum collector dissipation (t c = 25c, igbt part, t j(max) 150c) p c 1 780 watts mounting torque, m6 terminal screws 44 in-lb mounting torque, m6 mounting screws 44 in-lb module weight (typical) 900 gr ams isolation voltage (charged part to baseplate, ac 60hz 1 min.) v iso 7 .7 kv olts partial discharge q pd 10 pc (v1 = 4800 v rms , v2 = 3500 v rms , f = 60hz (acc. to iec 1287)) maximum short-circuit pulse width, t psc 10 s (v cc 2500v, v ce v ces , v ge = 15v, t j = 125c) electrical characteristics, t j = 25 c unless otherwise specifed characteristics symbol test conditions min. typ. max. units collector-cutoff current i ces v ce = v ces , v ge = 0v 2.0 ma gate leakage current i ges v ge = v ges , v ce = 0v 0.5 a gate-emitter threshold voltage v ge(th) i c = 15ma, v ce = 10v 5.5 6.0 6.5 volts collector-emitter saturation voltage v ce(sat) i c = 200a, v ge = 15v, t j = 25c 2.7*** 3.3 volts i c = 200a, v ge = 15v, t j = 125c 3.4 4.0 volts i c = 200a, v ge = 15v, t j = 150c 3.6 volts total gate charge q g v cc = 1800v, i c = 170a, v ge = 15v 1 .8 c emitter-collector voltage** v ec i e = 200a, v ge = 0v, t j = 25c 2.3 3.0 volts i e = 200a, v ge = 0v, t j = 125c 2.45 volts i e = 200a, v ge = 0v, t j = 150c 2.55 volts * pulse width and repetition rate should be such that device junction temperature (t j ) does not exceed t j(max) rating. **represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (fwdi). *** pulse width and repetition rate should be such that device junction temperature rise is negligible.
QID3320002 dual igbt hvigbt module 200 amperes/3300 volts 3 01/13 rev. 8 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com electrical characteristics, t j = 25 c unless otherwise specifed characteristics symbol test conditions min. typ. max. units input capacitance c ies 23 nf output capacitance c oes v ge = 0v, v ce = 10v 1 .5 nf reverse transfer capacitance c res 0.7 nf turn-on delay time t d(on) v cc = 1650v, i c = 200a, 800 ns rise time t r v ge = +15v/-8v, 1 60 ns turn-off delay time t d(off) r g(on) = 15?, r g(off) = 50?, 3200 ns fall time t f l s = 125nh, inductive load 1 300 ns turn-on switching energy e on t j = 125c, i c = 200a, v ge = +15v/-8v, 335 mj/p turn-off switching energy e off r g(on) = 15?, r g(off) = 50?, 275 mj/p v cc = 1650v, l s = 125nh, inductive load diode reverse recovery time** t rr v cc = 1650v, i e = 200a, 500 ns diode reverse recovery charge** q rr v ge = +15v/-8v, r g(on) = 15?, 1 80* c diode reverse recovery energy e rec l s = 125nh, inductive load, t j = 125c 1 90 mj/p stray inductance (c1-e2) l sce 60 nh lead resistance terminal-chip r ce 0.8 m? thermal and mechanical characteristics, t j = 25 c unless otherwise specifed characteristics symbol test conditions min. typ. max. units thermal resistance, junction to case*** r th(j-c) q per igbt 0.07 4 c/w thermal resistance, junction to case*** r th(j-c) d per fwdi 0.1 1 c/w contact thermal resistance, case to fin r th(c-f) per module, 0.0 18 c/w thermal grease applied, grease = 1w/mk comparative tracking index cti 600 clearance distance in air (terminal to base) d a(t-b) 35.0 mm creepage distance along surface d s(t-b) 64 mm (terminal to base) clearance distance in air d a(t-t) 19 mm (terminal to terminal) creepage distance along surface d s(t-t) 54 mm (terminal to terminal) *pulse width and repetition rate should be such that device junction temperature rise is negligible. **represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (fwdi). ***t c measurement point is just under the chips.
QID3320002 dual igbt hvigbt module 200 amperes/3300 volts 4 01/13 rev. 8 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com emitter-collector voltage, v ec , (volts) free-wheel diode forward characteristics (typical) emitter current, i e , (amperes) collector-emitter saturation voltage, v ce(sat) , (volts ) collector-current, i c , (amperes) collector-emitter saturation voltage characteristics (typical) v ce = v ge t j = 25c t j = 150c collector-emitter voltage, v ce , (volts) collector current, i c , (amperes) output characteristics (typical) 0 21 3 4 5 6 0 v ge = 19v 11 15 13 9 t j = 150 c 50 100 150 200 250 300 0 50 100 150 200 250 300 0 50 100 150 200 250 300 0 50 100 150 200 250 300 0 42 6 8 10 12 gate-emitter voltage, v ge , (volts) collector-current, i c , (amperes) transfer characteristics (typical) 0 5 2 43 v ge = 15v t j = 25c t j = 150c 1 0 5 2 43 1 t j = 25c t j = 150c
QID3320002 dual igbt hvigbt module 200 amperes/3300 volts 5 01/13 rev. 8 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com collector-emitter voltage, v ce , (volts) capacitance, c ies , c oes , c res , (nf) capacitance vs. v ce (typical) 10 0 10 2 100 10 1.0 0.1 10 1 v ge = 0v t j = 25c f = 100 khz c ies c oes c res 0 10050 150 200 250 300 350 10 -1 gate charge, q g , ( c) gate-emitter voltage, v ge , (volts) gate charge vs. v ge 20 0 5 10 15 0 -5 -10 -15 0.5 2.0 1.5 1.0 v ce = 1800v i c = 170a t j = 25c collector current, i c , (amperes) switching energies, e on , e off , e rec , (mj/pulse) 1100 1000 800 900 100 200 300 400 500 600 700 0 v cc = 1800v v ge = +15v/-8v r g(on) = 15 r g(off) = 50 l s = 100nh t j = 150c inductive load half-bridge switching energy characteristics (typical) e on e off e rec 0 10050 150 200 250 300 350 collector current, i c , (amperes) switching energies, e on , e off , e rec , (mj/pulse) 1000 800 900 100 200 300 400 500 600 700 0 v cc = 1800v v ge = +15v/-8v r g(on) = 15? r g(off) = 50? l s = 100nh t j = 125c inductive load switching energy characteristics (typical) e rec e on e off
QID3320002 dual igbt hvigbt module 200 amperes/3300 volts 6 01/13 rev. 8 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com collector emitter voltage, v ces , (volts) 550 440 330 220 110 0 2000 1000 3000 0 collector current, i c , (amperes) reverse bias safe operating area (typical) v cc 2500v v ge = +15v/-8v r g(off) = 50 t j = 150c 4000 time, (s) transient thermal impedance characteristics (igbt & fwdi) 1.2 1.0 10 -1 10 -2 10 -3 10 0 10 1 0.8 0.6 0.4 0.2 0 z th = r th ? (normalized value) single pulse t c = 25c per unit base = r th(j-c) = 0.074c/w (igbt) r th(j-c) = 0.11c/w (fwdi) normalized transient thermal impedance, z th(j-c') emitter-collector voltage, v ec , (volts) 550 440 330 220 110 0 2000 1000 3000 0 reverse recovery current, i rr , (amperes) free-wheel diode reverse recovery safe operating area (typical) v cc 2500v di/dt = 1ka/s t j = 150c 4000
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